Semiconductor devices and methods of manufacturing
US12255070B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 30, 2021 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Aug 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor structure, a first conductive feature is formed in a trench by PVD and a glue layer is then deposited on the first conductive feature in the trench before CVD deposition of a second conductive feature there-over. The first conductive feature acts as a protection layer to keep silicide from being damaged by later deposition of metal or a precursor by CVD. The glue layer extends along the extent of the sidewall to enhance the adhesion of the second conductive features to the surrounding dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.