Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof
US12255233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2022 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | May 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.