Semiconductor memory device and method of manufacturing the same
US12255237B2 · kind B2 · utility
0Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Sep 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
Abstract
A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.