Patent · US Active

Semiconductor device

US12255254B2 · kind B2 · utility

0Cited by
6References
24Claims
0Family size

Assignees

Inventors

Key dates

Filing dateOct 5, 2023
Grant dateMar 18, 2025
Priority date
Expiry dateOct 5, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/256
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.