Polishing pad and method of fabricating semiconductor device using the same
US12258460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2021 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Feb 16, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08J2375/08
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) 13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, a third peak appearing at 138 ppm to 143 ppm, and a fourth peak appearing at 55 ppm to 65 ppm, and the softening control index calculated by Equation 1 is 0.10 to 0.45. The polishing pad includes the polishing layer having physical properties corresponding to the softening control index, and thus may exhibit a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.