Tracking and updating read command voltage thresholds in solid-state drives
US12260129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2023 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | May 1, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are related to a system and a method for adjusting a read voltage threshold to read data from a plurality of memory dies of a nonvolatile memory device. Each of the plurality of memory dies comprises a plurality of blocks. A controller in communication with the plurality of memory dies may read, from a first block of the plurality of blocks, data corresponding to a read command received from a host. The controller may determine a bit error rate for the first block based on the data. The controller may update the read voltage threshold for the first block when the bit error rate for the first block exceeds a first error threshold. The read voltage threshold may be stored in the controller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.