MFMFET, MFMFET array, and the operating method thereof
US12260891B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Nov 7, 2022 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Apr 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2293
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A metallic ferroelectric metal (MFM) field effect transistor (FET) is provided that includes an MFM, a first FET and a second FET. The MFM has a first electrode. The first FET is electrically connected to the first electrode, and has a first gate electrode, wherein the first gate electrode has a first area. The second FET is electrically connected to the first electrode, and has a second gate electrode, wherein the second gate electrode has a second area, and the first area and the second area have a ratio therebetween ranging from 1:50 to 1:2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.