Inventor · Kaohsiung, TW

Tuo-Hung Hou

25Patents
6h-index
33Co-inventors
69Inventor score

Filing activity: Dec 19, 2002 → Jan 18, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7071066B2 Method and structure for forming high-k gates Electricity 35 Expired
US6753224B1 Layer of high-k inter-poly dielectric Emerging Cross-Sectional Technologies 18 Expired
US9553199B2 FET device having a vertical channel in a 2D material layer Electricity 13 Active
US9059391B2 Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof Electricity 9 Active
US7303996B2 High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics Electricity 8 Expired
US8687432B2 Multi-bit resistive-switching memory cell and array Physics 6 Active
US11599600B2 Computing in memory cell Physics 2 Active
US10236061B2 Resistive random access memory having charge trapping layer, manufacturing method thereof, and operation thereof Physics 2 Active
US9715931B2 Resistive memory apparatus and a writing method thereof Physics 1 Active
US10510903B2 Impact ionization semiconductor device and manufacturing method thereof Electricity 1 Active
US11625588B2 Neuron circuit and artificial neural network chip Physics 1 Active
US10056432B2 Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture Electricity 1 Active
US10902317B2 Neural network processing system Physics 1 Active
US10428427B2 Fabrication method for two-dimensional materials Chemistry; Metallurgy 0 Active
US11741189B2 Computing in memory cell Physics 0 Active
US11031510B2 Impact ionization semiconductor device and manufacturing method thereof Electricity 0 Active
US9269434B2 Resistive memory apparatus and write-in method thereof Electricity 0 Active
US11494619B2 Device and method for operating the same Physics 0 Active
US12260891B2 MFMFET, MFMFET array, and the operating method thereof Physics 0 Active
US9978941B2 Self-rectifying resistive random access memory cell structure Electricity 0 Active
US11145356B2 Computation operator in memory and operation method thereof Physics 0 Active
US12142342B2 Memory circuit with sense amplifier calibration mechanism Physics 0 Active
US10868195B2 Impact ionization semiconductor device and manufacturing method thereof Electricity 0 Active
US8542540B2 Nonvolatile memory and methods for manufacturing the same with molecule-engineered tunneling barriers Physics 0 Active
US12406721B2 Memory cell Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.