Slurry compositions for chemical mechanical planarization
US12261055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2022 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Jan 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method includes receiving a semiconductor device having a first surface and a second surface. The first surface is a top surface including a conductive material exposed thereon; and the second surface is an embedded surface including the conductive material and a dielectric material. The method also includes selecting a first polishing slurry to achieve a first polishing rate of the conductive material in the first polishing slurry and a second polishing rate of the dielectric material in the first polishing slurry. The method further includes selecting a second polishing slurry to achieve a third polishing rate of the conductive material in the second polishing slurry and a fourth polishing rate of the dielectric material in the second polishing slurry. The method additionally includes polishing the first surface with the first polishing slurry until the second surface is exposed; and polishing the second surface with the second polishing slurry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.