Semiconductor device and method for fabricating the same
US12261169B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Apr 29, 2022 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Jul 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first NMOS region, a first PMOS region, a second NMOS region, a second PMOS region, and a MOS capacitor region, forming a fin NMOS transistor on the first NMOS region, forming a fin PMOS transistor on the first PMOS region, forming a planar NMOS transistor on the second NMOS region, forming a planar PMOS transistor on the second PMOS region, and forming a planar MOS capacitor on the MOS capacitor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.