Semiconductor structure and manufacturing method thereof
US12261195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2021 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Aug 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
Abstract
The present disclosure provides a manufacturing method of a semiconductor structure, and a semiconductor structure. The manufacturing method of a semiconductor structure includes: forming a plurality of cylindrical capacitors in an initial structure; removing part of the initial structure to form trenches, the trenches expose partial sidewalls of the cylindrical capacitors and a substrate of the initial structure; forming a dielectric layer, the dielectric layer at least covers an exposed surface of each of the cylindrical capacitors; forming a first top electrode, the first top electrode covers a surface of the dielectric layer; and forming a second top electrode, the second top electrode covers a surface of the first top electrode. In an axial direction of each of the cylindrical capacitors, the second top electrode formed in each of the trenches has a discontinuous part, and an air gap is formed in the discontinuous part of the second top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.