Thin film transistor, display substrate and display device with reduced leakage current
US12261227B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 21, 2021 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Jul 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a thin film transistor, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor of the present disclosure includes: a base, and a gate, an active layer, a source and a drain located on the base, where the gate includes a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base, and the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.