EUV mask blank and method of making EUV mask blank
US12265322B2 · kind B2 · utility
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1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 4, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Aug 4, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/52
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.