Selective EMI shielding using preformed mask with fang design
US12266615B2 · kind B2 · utility
0Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Feb 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.