Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device
US12266710B2 · kind B2 · utility
0Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2021 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Mar 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
Provided are a thin film structure, a semiconductor device including the thin film structure, and a semiconductor apparatus including the semiconductor device. The thin film structure includes a substrate, and a ferroelectric layer on the substrate. The ferroelectric layer includes a compound having fluorite structure, in which a <001> crystal direction is aligned in a normal direction of a substrate, and having an orthorhombic phase and including fluorine. The ferroelectric layer may have ferroelectricity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.