Transistors with monocrystalline metal chalcogenide channel materials
US12266720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2020 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Jun 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.