Microelectronic devices comprising stack structures having pillars and elliptical conductive contacts
US12267997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Dec 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a microelectronic device including a first stack structure comprising alternating levels of insulative structures and other insulative structures, forming strings of memory cells through the first stack structure, forming a second stack structure over the first stack structure, based at least partially on observed amount of pillar bending within the first stack structure, forming a first tailored reticle specific to the observed amount of pillar bending, utilizing the first tailored reticle to form openings extending through the second stack structure and over some of the strings of memory cells, wherein centers of the openings over the strings of memory cells are at least substantially aligned with the centers of uppermost surfaces of the strings of memory cells in a direction of the observed pillar bending, and forming upper pillars extending through the second stack structure and over some of the strings of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.