Semiconductor devices with string select channel layer
US12268004B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Jan 30, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Feb 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.