Ultraviolet detector and preparation method therefor

US12268035B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Xingye Zhou · Shijiazhuang, CN
• Xin Tan · Beijing, CN
• Yuanjie Lv · Shijiazhuang, CN
• Yuangang Wang · Nanhu, CN
• Xubo Song · Shijiazhuang, CN
• Shixiong Liang · Sichuan, CN
• Zhihong Feng · Shijiazhuang, CN

Key dates

• Filing date: Mar 2, 2022
• Grant date: Apr 1, 2025
• Expiry date: May 6, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/306

Abstract

A ultraviolet detector includes a substrate; a first epitaxial layer that is a heavily doped epitaxial layer and located on the substrate, a second epitaxial layer located on the first epitaxial layer, where the second epitaxial layer is a lightly doped epitaxial layer, or a double-layer or multi-layer structure composed of at least one lightly doped epitaxial layer and at least one heavily doped epitaxial layer; an ohmic contact layer located on the second epitaxial layer or formed in the second epitaxial layer, where the ohmic contact layer is a graphical heavily doped layer; and a first metal electrode layer located on the ohmic contact layer.