Patent · US Active

Semiconductor apparatus

US12268105B2 · kind B2 · utility

0Cited by
5References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 10, 2023
Grant dateApr 1, 2025
Priority date
Expiry dateJul 10, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8413

Abstract

A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.