Nonvolatile memory device and operating method of the same
US12268106B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Feb 10, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Feb 10, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.