Method for estimating parameters of a junction of a power semi-conductor element and power unit
US12270715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Nov 6, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2628
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to a method for estimating parameters of a junction of a power semi-conductor element comprising: •—Detecting at least one stable on-line operating condition through measurements (2, 3, 4) of Von, Ion, Tc on a semi-conductor module (1) where Ion is a current for which the on-state voltage Von of the semi-conductor is sensitive to the temperature and Tc is the temperature of the casing of said semi-conductor element; •—Measuring and storing at least one parameter set Von, Ion, Tc of said at least one stable operating condition; •—in a calculating unit (52), providing calculations for minimizing the error between a junction temperature estimation Tj of an electrical model Tj=F(Von, Ion, θelec) comprising a first set of unknown parameters θelec and another junction temperature estimation Tjmod of a loss/thermal model Tj=G(Ion, Tc, θ mod) comprising a second set of unknown parameters θ mod and obtaining at least one set of parameters θelec and at least one parameter θ mod providing minimization of said error; •—providing the calculated value of Tj with at least one of the calculated parameters sets θelec and/or θ mod and the measured Von, Ion, Tc; •—Stori…
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