EPI self-heating sensor tube as in-situ growth rate sensor
US12270752B2 · kind B2 · utility
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7References
20Claims
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Key dates
| Filing date | May 23, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Dec 22, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8427
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for determining a growth rate on a semiconductor substrate is described herein. The apparatus is an optical sensor, such as an optical growth rate sensor. The optical sensor is positioned in an exhaust of a deposition chamber. The optical sensor is self-heated using one or more internal heating elements, such as a resistive heating element. The internal heating elements are configured to heat a sensor coupon. A film is formed on the sensor coupon by exhaust gases flowed through the exhaust and is correlated to film growth on a substrate within a process volume of the deposition chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.