Method of manufacturing a semiconductor device
US12272554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2023 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.