Selective removal of metal oxide hard masks
US12272560B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Dec 22, 2021 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Dec 22, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F11/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.