Contact features of semiconductor device and method of forming same
US12272600B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jan 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/535
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.