Buried conductive structure in semiconductor substrate
US12272621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Apr 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a buried conductive structure in a semiconductor substrate and a method for forming the structure. The structure includes an epitaxial region disposed on a substrate and adjacent to a nanostructured gate layer and a nanostructured channel layer, a first silicide layer disposed within a top portion of the epitaxial region, and a first conductive structure disposed on a top surface of the first silicide layer. The structure further includes a second silicide layer disposed within a bottom portion of the epitaxial region and a second conductive structure disposed on a bottom surface of the second silicide layer and traversing through the substrate, where the second conductive structure includes a first metal layer in contact with the second silicide layer and a second metal layer in contact with the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.