Semiconductor device and method for fabricating the same
US12272693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jun 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of: providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region; forming a base on the HV region and fin-shaped structures on the LV region; forming a first insulating around the fin-shaped structures; removing the base, the first insulating layer, and part of the fin-shaped structures to form a first trench in the HV region and a second trench in the LV region; forming a second insulating layer in the first trench and the second trench; and planarizing the second insulating layer to form a first shallow trench isolation (STI) on the HV region and a second STI on the LV region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.