High reflectance isolation structure to increase image sensor performance
US12272715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jan 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. A plurality of photodetectors is disposed in the semiconductor substrate. An isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. The isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. The metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.