Low etch pit density gallium arsenide crystals with boron dopant
US12276044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2019 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Nov 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems for low etch pit density gallium arsenide crystals with boron dopant may include a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density of less than 500 cm−2, and optical absorption of 6 cm−1 or less at 940 nm. The wafer may have an etch pit density of less than 200 cm−2. The wafer may have a diameter of 6 inches or greater. The wafer may have a boron concentration between 1×1019 cm−3 and 2×1019 cm−3. The wafer may have a thickness of 300 μm or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.