AXT, INC.
🏢 View company profile →19Patents
12Active
19Granted
50Portfolio score
Filing activity: Jul 26, 2000 → Sep 8, 2023 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6650018B1 | High power, high luminous flux light emitting diode and method of making same | Electricity | 69 | Expired |
| US6420736B1 | Window for gallium nitride light emitting diode | Electricity | 19 | Expired |
| US6580096B2 | Window for light-emitting diode | Electricity | 13 | Expired |
| US6643304B1 | Transparent substrate light emitting diode | Electricity | 10 | Expired |
| US6495867B1 | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire | Electricity | 7 | Expired |
| US6896729B2 | Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6459098B1 | Window for light emitting diode | Electricity | 5 | Expired |
| US7566641B2 | Low etch pit density (EPD) semi-insulating GaAs wafers | Electricity | 5 | Active |
| US8506706B2 | Systems, methods and substrates of monocrystalline germanium crystal growth | Emerging Cross-Sectional Technologies | 2 | Active |
| US11608569B2 | Low etch pit density, low slip line density, and low strain indium phosphide | Electricity | 1 | Active |
| US8361225B2 | Low etch pit density (EPD) semi-insulating III-V wafers | Emerging Cross-Sectional Technologies | 1 | Active |
| US8318042B2 | Systems, methods and solutions for chemical polishing of GaAs wafers | Electricity | 1 | Active |
| US12398486B2 | Method and system for vertical gradient freeze 8 inch gallium arsenide substrates | Chemistry; Metallurgy | 0 | Active |
| US11680340B2 | Low etch pit density 6 inch semi-insulating gallium arsenide wafers | Electricity | 0 | Active |
| US12276044B2 | Low etch pit density gallium arsenide crystals with boron dopant | Electricity | 0 | Active |
| US12054851B2 | Low etch pit density, low slip line density, and low strain indium phosphide | Electricity | 0 | Active |
| US12084790B2 | Low etch pit density 6 inch semi-insulating gallium arsenide wafers | Electricity | 0 | Active |
| US8231727B2 | Crystal growth apparatus and method | Emerging Cross-Sectional Technologies | 0 | Active |
| US8647433B2 | Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.