Blank mask and photomask using the same
US12276905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Dec 12, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/48
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8. Rd=er2/er1 [Equation 1]In the Equation 1, the er1 value is an etching rate of the first light shielding layer measured by etching with argon gas.The er2 value is an etching rate of the second light shielding layer measured by etching with argon gas.In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.