Pattern height metrology using an e-beam system
US12278086B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 2, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Oct 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2826
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by using an electron beam (e-beam) system, in particular, by using a scanning electron microscope (SEM). In this respect, the disclosure provides a device for determining the pattern height, wherein the device comprising a processor. The processor is configured to obtain a SEM image of the pattern from an SEM. Further, the processor is configured to determine a contrast value related to the pattern based on the obtained SEM image. Subsequently, the processor is configured to determine the pattern height based on calibration data and the determined contrast value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.