Plasma uniformity control system and methods
US12278089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2023 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Mar 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3344
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a plurality of planar coils, a first power supply circuit coupled to at least two of the plurality of planar coils, a concentric coil region at least partially surrounding the planar coil region, and a second power supply circuit coupled to at least two of a plurality of concentric coils. The first power supply circuit may be configured to bias the at least two of the plurality of planar coils to affect a plasma in a center region of the plasma processing chamber, and the second power supply circuit may be configured to bias the at least two of the plurality of concentric coils to affect the plasma in an outer region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.