Method of manufacturing conductors for semiconductor device
US12278230B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2023 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Jul 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method (of manufacturing conductors for a semiconductor device) includes: forming active regions (ARs) in a first layer, the ARs extending in a first direction; forming a conductive layer over the first layer; forming first, second and third caps over the conductive layer, the caps extending in a second direction perpendicular to the first direction, and the caps having corresponding first, second and third sensitivities that are different from each other; removing portions of the conductive layer not under the first, second or third caps resulting in gate electrodes under the first caps and first and second drain/source (D/S) electrodes correspondingly under the second or third caps; and selectively removing portions of corresponding ones of the first D/S electrodes and the second D/S electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.