Configurable capacitors with 3D non-volatile array
US12279430B2 · kind B2 · utility
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3References
10Claims
0Family size
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Key dates
| Filing date | Sep 28, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A stack of alternating layers of dielectric and conductive materials are formed on a substrate. A first portion of the stack of alternating layers forms a plurality of blocks of NAND memory. A second portion of the stack of alternating layers forms a configurable capacitor structure. The configurable capacitor structure is configurable to form one or more capacitors of configurable capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.