Zero expansion in a replacement metal gate process with a spacer
US12279454B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 23, 2021 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Sep 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
Zero expanded functional gate structures are formed by utilizing a dipole material spacer as a means to prevent expanded void formation during a replacement metal gate process. Notably, the dipole material spacer prevents expanded void formation into the dielectric spacer thus preventing the functional gate structures from being in direct physical contact with the source/drain regions. Improvement in yield loss and reliability is thus provided utilizing a dipole material spacer during a replacement metal gate process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.