Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
US12281251B2 · kind B2 · utility
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1References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Mar 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.