Balancing power, endurance and latency in a ferroelectric memory
US12282681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Jun 15, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2275
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for managing data in a non-volatile memory (NVM) having an array of ferroelectric memory cells (FMEs). A data set received from an external client device is programmed to a group of the FMEs at a target location in the NVM using a selected profile. The selected profile provides different program characteristics, such as applied voltage magnitude and pulse duration, to achieve desired levels of power used during the program operation, endurance of the data set, and latency effects associated with a subsequent read operation to retrieve the data set. The profile may be selected from among a plurality of profiles for different operational conditions. The ferroelectric NVM may form a portion of a solid-state drive (SSD) storage device. Different types of FMEs may be utilized including ferroelectric tunneling junctions (FTJs), ferroelectric random access memory (FeRAM), and ferroelectric field effect transistors (FeFETs).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.