Conformal and smooth titanium nitride layers and methods of forming the same
US12283486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a NH3 precursor at a NH3 precursor flow rate, after forming the TiN film, subjecting the semiconductor substrate, without further deposition of the TiN thin film, to a post-deposition exposure of NH3 at a second NH3 flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.