Semiconductor device with multiple electrodes and an insulation film
US12283615B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Aug 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
Abstract
A semiconductor device includes: a second electrode, located in a semiconductor part, extending in a first direction; a third electrode, located in the semiconductor part, including a first portion, a second portion, and a first middle portion positioned below the second electrode between the first portion and the second portion, the second electrode being located between the first portion and the second portion in the first direction; a fourth electrode, located above the semiconductor part, including a pad portion separated from the second electrode and the second portion in a second direction, and a protrusion protruding from the pad portion and covering the second electrode and being connected to the second electrode; and a fifth electrode, located above the semiconductor part, including a first covering portion being connected to the first contact portion and a second covering portion being connected to the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.