Method for cutting substrate wafer from indium phosphide crystal bar

US12285819B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Yanlei SHI · Laishui, CN
• Niefeng Sun · Laishui, CN
• Shujie Wang · Laishui, CN
• Hongfei ZHAO · Laishui, CN
• Yaqi LI · Laishui, CN
• Lijie FU · Laishui, CN
• Yang Wang · Huangshan, CN
• Xiaolan Li · Laishui, CN
• Huimin SHAO · Laishui, CN
• Huisheng Liu · Laishui, CN
• Jian JIANG · Laishui, CN

Key dates

• Filing date: Sep 10, 2020
• Grant date: Apr 29, 2025
• Expiry date: Jun 15, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P80/30
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area. According to the technical scheme, for the indium phosphide crystal bar which is difficult to control in diameter and easy to twinning/poly in the growth process, a barreling process which may grind and remove a large amount of InP materials is abandoned, the crystal bar is multi-wire cut into a wafer, and then the substrate wafer which is available in the crystal direction close to the standard size is cut from the wafer to the maximum extent, …