Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography
US12287569B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 2, 2021 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Apr 2, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B32/17
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A pellicle film for photolithography including a carbon nanotube film, in which the carbon nanotube film contains carbon nanotubes; the carbon nanotube film transmits 80% or more of EUV light at a wavelength of 13.5 nm; the carbon nanotube film has a thickness from 1 nm to 50 nm; the carbon nanotube film is deposited on a silicon substrate, in which the 3σ of the reflectance is 15% or less when the reflectance of the deposited carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions: the diameter of measurement spots, 20 μm; the reference measurement wavelength, 285 nm; the number of measurement spots, 121 spots; the distance between the centers of adjacent measurement spots, 40 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.