Method for operating an EUV lithography apparatus, and EUV lithography apparatus
US12287588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2022 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Jun 13, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/062
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for operating an EUV lithography apparatus (1) with at least one vacuum housing (27) for at least one reflective optical element (12) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface (12a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.