Integrated circuit device and method of manufacturing the same
US12288805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2024 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | May 17, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An integrated circuit device is provided and includes: a fin-type active region extending in a first horizontal direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region on the fin-type active region and extending in a second horizontal direction crossing the first horizontal direction, an insulating spacer covering a sidewall of the gate line, a source/drain region connected to the channel region on the fin-type active region and including a first portion facing the sidewall of the gate line with the insulating spacer therebetween, an air gap between the insulating spacer and the first portion of the source/drain region, and an insulating liner including a portion in contact with the source/drain region and a portion defining a size of the air gap. A method of manufacturing the integrated circuit device is further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.