Haejun Yu
11Patents
1h-index
18Co-inventors
40Inventor score
Filing activity: Dec 20, 2020 → May 17, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11682673B2 | Semiconductor device | Electricity | 2 | Active |
| US11605711B2 | Semiconductor device having an air gap between gate electrode and source/drain pattern | Electricity | 1 | Active |
| US12288805B2 | Integrated circuit device and method of manufacturing the same | Electricity | 0 | Active |
| US11888028B2 | Semiconductor device having a liner layer and method of fabricating the same | Electricity | 0 | Active |
| US12046632B2 | Semiconductor device having air gap between gate electrode and source/drain pattern | Electricity | 0 | Active |
| US12310055B2 | Semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US12243874B2 | Method of forming a static random-access memory (SRAM) cell with fin field effect transistors | Electricity | 0 | Active |
| US11417731B2 | Semiconductor device including a field effect transistor and method of fabricating the same | Electricity | 0 | Active |
| US12034043B2 | Integrated circuit device and method of manufacturing the same | Electricity | 0 | Active |
| US12113108B2 | Integrated circuit device | Electricity | 0 | Active |
| US12256564B2 | Semiconductor device having a liner layer and method of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.