RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer
US12289087B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jan 23, 2023 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Aug 30, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.