Semiconductor device and method for manufacturing the same
US12289901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2021 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Nov 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is less than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.