Nitride-based semiconductor device and method for manufacturing the same
US12289904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2022 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | May 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a lattice layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The lattice layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The lattice layer comprises a plurality of first III-V layers and second III-V layers alternatively stacked. Each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region. The high resistivity region comprises more metal oxides than the current aperture. At least two of the current apertures have different dimensions such that interfaces formed between the high resistivity regions and the current apertures misalign with each other. The gate electrode aligns with the current aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.