Semiconductor device and method for manufacturing the same
US12289920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2021 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Nov 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first and a second electrodes, a first and a second gate electrodes, a first and a second passivation layers and a conductive layer. The first passivation layer has a first portion covered with a first end portion of the first field plate and a second portion free from coverage of the first field plate. The second passivation layer has a first portion covered by the conductive layer and a second portion free from coverage of the conductive layer. A thickness difference between the first and the second portions of the first passivation layer is less than a thickness difference between the first and the second portions of the second passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.